with three charge-transfer gates, e.g. MOS transistors, per cell

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor > using electric elements > using semiconductor devices > using transistors > forming cells needing refreshing or charge regeneration, i.e. dynamic cells > with charge regeneration common to a multiplicity of memory cells, i.e. external refresh > with three charge-transfer gates, e.g. MOS transistors, per cell

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (G11C14/00 - G11C21/00 take precedence) > using electric elements > using semiconductor devices > using transistors > forming cells needing refreshing or charge regeneration, i.e. dynamic cells > with charge regeneration common to a multiplicity of memory cells, i.e. external refresh > with three charge-transfer gates, e.g. MOS transistors, per cell