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PCE
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IPC Subgroup
G11C 11/405

with three charge-transfer gates, e.g. MOS transistors, per cell

Introduced: January 1990

Last revised: January 2006

Full Title

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor > using electric elements > using semiconductor devices > using transistors > forming cells needing refreshing or charge regeneration, i.e. dynamic cells > with charge regeneration common to a multiplicity of memory cells, i.e. external refresh > with three charge-transfer gates, e.g. MOS transistors, per cell

Classification Context

Section:
PHYSICS
Class:
INFORMATION STORAGE
Subclass:
STATIC STORES