DIFF Subgroup
H10D 62/852 being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
Introduced: January 2025
Full Title
Semiconductor bodies, or regions thereof, of devices having potential barriers > characterised by the materials > being Group III-V materials, e.g. GaAs > being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
No child classifications to compare. This is a leaf node in both IPC and CPC.