H10D INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
Introduced: January 2025
Description
H10D covers inorganic semiconductor devices and solid-state electronic components not classified elsewhere in section H10. This subclass encompasses a broad range of semiconductor technologies including diodes, transistors, thyristors, and other discrete or integrated inorganic semiconductor devices based on materials such as silicon, germanium, gallium arsenide, and similar compounds. It serves as a residual category for inorganic semiconductor inventions that do not fall within the more specialized subclasses H10B (semiconductor devices with at least one potential-jump barrier or surface barrier), H10F (unspecified semiconductor devices), or other dedicated H10 classifications. Typical applications include power electronics, microwave devices, and specialized semiconductor components for which no specific classification exists.
Additional Content IPC
Glossary
thyristor thyristors device having a control electrode and having regenerative action within four or more alternating P-type and N-type regions Group IV material Group IV materials material comprising only Group IV elements, except for dopants or other impurities Group III-V material Group III-V materials material comprising only Group III and Group V elements, except for dopants or other impurities Group II-VI material Group II-VI materials material comprising only Group II and Group VI elements, except for dopants or other impurities Group I-VI material Group I-VI materials material comprising only comprising Group I or Group VI elements, except for dopants or other impurities Group I-VII material Group I-VII materials material comprising only comprising Group I or Group VII elements, except for dopants or other impurities
Limiting references
Electronic memory devices Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation Light-emitting semiconductor devices having potential barriers Thermoelectric, thermomagnetic, piezoelectric, electrostrictive, magnetostrictive, magnetic-effect, superconducting, Ovshinsky-effect, bulk negative resistance effect devices Generic packages, interconnections, connectors or other constructional details of devices covered by class
Application references
Use of semiconductor devices for measuring
IPC and CPC are identically structured here. All 17 subcodes exist in both systems.
4 shared codes have differing titles between IPC and CPC.
IPC defines codes here since 2025.
Child Classifications
Navigate with arrow keys, Enter to open
- H10D 12/00 Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT] since 2025 +2 CPC IPC+CPC Available in IPC and CPC
- H10D 30/00 Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00) since 2025 +3 CPC IPC+CPC Available in IPC and CPC
- H10D 48/00 Individual devices not covered by groups H10D1/00 - H10D44/00 since 2025 +3 CPC IPC+CPC Available in IPC and CPC
- H10D 62/00 Semiconductor bodies, or regions thereof, of devices having potential barriers since 2025 +1 CPC IPC+CPC Available in IPC and CPC
- H10D 64/00 Electrodes of devices having potential barriers since 2025 +2 CPC IPC+CPC Available in IPC and CPC
- H10D 8/00 Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) since 2025 +4 CPC IPC+CPC Available in IPC and CPC
- H10D 80/00 Assemblies of multiple devices comprising at least one device covered by this subclass since 2025 IPC+CPC Available in IPC and CPC
- H10D 84/00 Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers since 2025 +3 CPC IPC+CPC Available in IPC and CPC
- H10D 86/00 Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates since 2025 +1 CPC IPC+CPC Available in IPC and CPC
- H10D 87/00 Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate since 2025 IPC+CPC Available in IPC and CPC
- H10D 88/00 Three-dimensional [3D] integrated devices since 2025 +2 CPC IPC+CPC Available in IPC and CPC
- H10D 89/00 Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00 since 2025 +1 CPC IPC+CPC Available in IPC and CPC
- H10D 99/00 Subject matter not provided for in other groups of this subclass since 2025 IPC+CPC Available in IPC and CPC
Top Applicants
Top Applicants (IPC)
Class H10,2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 21,044
- SAMSUNG ELECTRONICS COMPANY KR 14,774
- LG DISPLAY COMPANY KR 9,454
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 8,301
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 7,642
- BOE TECHNOLOGY GROUP COMPANY 6,845
- BOE TECHNOLOGY GROUP COMPANY CN 6,806
- SAMSUNG DISPLAY 6,577
- LG CHEM KR 5,461
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 5,115
Top Applicants (CPC)
Class H10,2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 38,446
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 30,922
- SAMSUNG ELECTRONICS COMPANY KR 30,059
- BOE TECHNOLOGY GROUP COMPANY CN 20,304
- LG DISPLAY COMPANY KR 17,772
- BOE TECHNOLOGY GROUP COMPANY 15,621
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 13,629
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 11,750
- SAMSUNG DISPLAY 11,316
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 9,697