IPC Subgroup
H10B 53/2 characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
Introduced: January 2023
Full Title
Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors > characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
Classification Context
- Section:
- ELECTRICITY
- Class:
- SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- Subclass:
- ELECTRONIC MEMORY DEVICES