H10B ELECTRONIC MEMORY DEVICES
Introduced: January 2023
Classification Context
- Section:
- ELECTRICITY
- Class:
- SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- Subclass:
- ELECTRONIC MEMORY DEVICES
Description
H10B covers semiconductor-based memory devices and solid-state storage technologies that do not fall within other specific H10 classifications. This includes volatile memory types such as RAM variants, as well as non-volatile memory technologies like flash memory, EEPROM, and other solid-state storage media used for data retention and retrieval. The classification encompasses the structural design, operational principles, and technical characteristics of these electronic memory devices at the component level. Adjacent classes address more specialized memory architectures or memory-related circuit functions handled separately within the H10 hierarchy.
Scope Notes
Glossary: volatile memory volatile memories memory requiring power supply to maintain the stored information: it loses any written data when the system is turned off. non-volatile memory non-volatile memories memory not requiring power supply to maintain the stored information: it retains the written data even when the system is turned off. ferroelectric memory capacitor ferroelectric memory capacitors capacitor with ferroelectric memory properties ferroelectric memory transistor ferroelectric memory transistors transistor with ferroelectric memory properties embedded in a layer of the gate electrodes, e.g. in a MFS or MFMIS layer
Related Keywords
12 direct subcodes
Child Classifications
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- H10B 10/00 Static random access memory [SRAM] devices
- H10B 12/00 Dynamic random access memory [DRAM] devices
- H10B 20/00 Read-only memory [ROM] devices
- H10B 41/00 Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B 43/00 EEPROM devices comprising charge-trapping gate insulators
- H10B 51/00 Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B 53/00 Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B 63/00 Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B 69/00 Erasable-and-programmable ROM [EPROM] devices not provided for in groups , e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
- H10B 80/00 Assemblies of multiple devices comprising at least one memory device covered by this subclass
- H10B 99/00 Subject matter not provided for in other groups of this subclass