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IPC Subgroup
H10D 84/4

characterised by the integration of at least one component covered by groups or with at least one component covered by groups or , e.g. integration of IGFETs with BJTs

Introduced: January 2025

Full Title

Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > characterised by the integration of at least one component covered by groups or with at least one component covered by groups or , e.g. integration of IGFETs with BJTs

Classification Context

Section:
ELECTRICITY
Class:
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Subclass:
INORGANIC ELECTRIC SEMICONDUCTOR DEVICES