H10D 84/40 characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
Introduced: January 2025
Title
Titles differ between systems:
IPC: characterised by the integration of at least one component covered by groups or with at least one component covered by groups or , e.g. integration of IGFETs with BJTs
CPC: characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
Full Title
Full titles differ between systems:
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > characterised by the integration of at least one component covered by groups or with at least one component covered by groups or , e.g. integration of IGFETs with BJTs
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
Of 1 combined children, 0 exist in both systems.
1 codes are CPC-only extensions.
Child Classifications
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