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IPC Subgroup
H10D 84/83

of only insulated-gate FETs [IGFET]

Introduced: January 2025

Full Title

Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs > of only field-effect components > of only insulated-gate FETs [IGFET]

Classification Context

Section:
ELECTRICITY
Class:
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Subclass:
INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

2 direct subcodes

Child Classifications

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  • H10D 84/84 Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
  • H10D 84/85 Complementary IGFETs, e.g. CMOS