H10D 84/83 of only insulated-gate FETs [IGFET]
Introduced: January 2025
Full Title
Full titles differ between systems:
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs > of only field-effect components > of only insulated-gate FETs [IGFET]
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs (H10D84/40 takes precedence) > of only field-effect components > of only insulated-gate FETs [IGFET]
CPC subdivides this area 7x more granularly than IPC with 12 additional codes.
12 codes are CPC-only extensions.
IPC defines codes here since 2025.
Child Classifications
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- H10D 84/84 Combinations of enhancement-mode IGFETs and depletion-mode IGFETs since 2025 IPC+CPC Available in IPC and CPC