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IPC Subgroup
H10F 30/22

the devices having only one potential barrier, e.g. photodiodes

Introduced: January 2025

Full Title

Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors > the devices having potential barriers, e.g. phototransistors > the devices being sensitive to infrared, visible or ultraviolet radiation > the devices having only one potential barrier, e.g. photodiodes

Classification Context

Section:
ELECTRICITY
Class:
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Subclass:
INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

5 direct subcodes

Child Classifications

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  • H10F 30/221 the potential barrier being a PN homojunction
  • H10F 30/222 the potential barrier being a PN heterojunction
  • H10F 30/223 the potential barrier being a PIN barrier
  • H10F 30/225 the potential barrier working in avalanche mode, e.g. avalanche photodiodes
  • H10F 30/227 the potential barrier being a Schottky barrier

Top Applicants

Top 10 applicants by patent filingsfor class H10, 2013–2023, worldwide · Source: EPO PATSTAT

  1. SAMSUNG DISPLAY KR 21,044
  2. SAMSUNG ELECTRONICS COMPANY KR 14,774
  3. LG DISPLAY COMPANY KR 9,454
  4. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 8,301
  5. SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 7,642
  6. BOE TECHNOLOGY GROUP COMPANY 6,845
  7. BOE TECHNOLOGY GROUP COMPANY CN 6,806
  8. SAMSUNG DISPLAY 6,577
  9. LG CHEM KR 5,461
  10. SEMICONDUCTOR ENERGY LABORATORY COMPANY 5,115