CRYSTAL GROWTH

Description

C30 covers techniques and apparatus for the controlled growth and formation of crystals from various starting materials, including melt, solution, vapor, and solid-state methods. This class encompasses methods for producing single crystals, polycrystalline materials, and epitaxial layers used in semiconductors, optics, and metallurgy. Technologies such as Czochralski pulling, Bridgman growth, vapor deposition, and hydrothermal synthesis fall within this scope, along with associated equipment and process control systems.

IPC and CPC are identically structured here. All 1 subcodes exist in both systems.

1 shared codes have differing titles between IPC and CPC.

IPC defines codes here since 1980.

Child Classifications

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C30B SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR heading since 1980 IPC+CPC Available in IPC and CPC