IPC Class
C30 CRYSTAL GROWTH
Classification Context
- Section:
- CHEMISTRY; METALLURGY
- Class:
- CRYSTAL GROWTH
Description
C30 covers techniques and apparatus for the controlled growth and formation of crystals from various starting materials, including melt, solution, vapor, and solid-state methods. This class encompasses methods for producing single crystals, polycrystalline materials, and epitaxial layers used in semiconductors, optics, and metallurgy. Technologies such as Czochralski pulling, Bridgman growth, vapor deposition, and hydrothermal synthesis fall within this scope, along with associated equipment and process control systems.
1 direct subcode
Child Classifications
Navigate with arrow keys, Enter to open
- C30B SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
Top Applicants
Top 10 applicants by patent filings, 2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,516
- SUMCO CORPORATION JP 786
- SUMCO CORPORATION 703
- SUMITOMO ELECTRIC INDUSTRIES JP 604
- SHIN ETSU HANDOTAI COMPANY JP 556
- GLOBALWAFERS COMPANY TW 492
- APPLIED MATERIALS US 463
- SHIN ETSU HANDOTAI COMPANY 450
- SUMITOMO ELECTRIC INDUSTRIES 436
- SILTRONIC DE 429