CPC Subgroup
C30B 15/04 adding doping materials, e.g. for n-p-junction
Full Title
Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) > adding crystallising materials or reactants forming it in situ to the melt > adding doping materials, e.g. for n-p-junction
Top Applicants
Top 10 applicants by patent filingsfor class C30, 2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,052
- SUMCO CORPORATION JP 881
- APPLIED MATERIALS US 871
- SUMITOMO ELECTRIC INDUSTRIES JP 682
- SHIN ETSU HANDOTAI COMPANY JP 649
- SHIN-ETSU CHEMICAL COMPANY JP 506
- SUMCO CORPORATION 500
- SILTRONIC DE 491
- GLOBALWAFERS COMPANY TW 458
- NGK INSULATORS JP 379