C30B 15/04 adding doping materials, e.g. for n-p-junction
Introduced: January 1980
Title
Titles differ between systems:
IPC: adding doping materials, e.g. for n–p-junction
CPC: adding doping materials, e.g. for n-p-junction
Full Title
Full titles differ between systems:
Single-crystal growth by pulling from a melt, e.g. Czochralski method > adding crystallising materials or reactants forming it to the melt > adding doping materials, e.g. for n–p-junction
Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) > adding crystallising materials or reactants forming it in situ to the melt > adding doping materials, e.g. for n-p-junction
No child classifications to compare. This is a leaf node in both IPC and CPC.
Top Applicants
Top Applicants (IPC)
Class C30,2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,516
- SUMCO CORPORATION JP 786
- SUMCO CORPORATION 703
- SUMITOMO ELECTRIC INDUSTRIES JP 604
- SHIN ETSU HANDOTAI COMPANY JP 556
- GLOBALWAFERS COMPANY TW 492
- APPLIED MATERIALS US 463
- SHIN ETSU HANDOTAI COMPANY 450
- SUMITOMO ELECTRIC INDUSTRIES 436
- SILTRONIC DE 429
Top Applicants (CPC)
Class C30,2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,052
- SUMCO CORPORATION JP 881
- APPLIED MATERIALS US 871
- SUMITOMO ELECTRIC INDUSTRIES JP 682
- SHIN ETSU HANDOTAI COMPANY JP 649
- SHIN-ETSU CHEMICAL COMPANY JP 506
- SUMCO CORPORATION 500
- SILTRONIC DE 491
- GLOBALWAFERS COMPANY TW 458
- NGK INSULATORS JP 379