by the use, as active elements, of semiconductor devices (using diodes H03K17/74)

Full Title

Electronic switching or gating, i.e. not by contact-making and –breaking (gated amplifiers H03F3/72; switching arrangements for exchange systems using static devices H04Q3/52) > characterised by the components used (H03K17/04 - H03K17/30, H03K17/94 take precedence) > by the use, as active elements, of semiconductor devices (using diodes H03K17/74)

Child Classifications

Navigate with arrow keys, Enter to open

• H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
• H03K 17/58 the devices being tunnel diodes
• H03K 17/60 the devices being bipolar transistors (bipolar transistors having four or more electrodes H03K17/72)
• H03K 17/687 the devices being field-effect transistors
• H03K 17/70 the devices having only two electrodes and exhibiting negative resistance (the devices being tunnel diodes H03K17/58)
• H03K 17/72 having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region