by the use, as active elements, of semiconductor devices (using diodes H03K17/74)

Introduced: September 1968

Title

Titles differ between systems:

IPC: by the use, as active elements, of semiconductor devices

CPC: by the use, as active elements, of semiconductor devices (using diodes H03K17/74)

Full Title

Full titles differ between systems:

IPC:

Electronic switching or gating, i.e. not by contact-making and -breaking > characterised by the use of specified components > by the use, as active elements, of semiconductor devices

CPC:

Electronic switching or gating, i.e. not by contact-making and –breaking (gated amplifiers H03F3/72; switching arrangements for exchange systems using static devices H04Q3/52) > characterised by the components used (H03K17/04 - H03K17/30, H03K17/94 take precedence) > by the use, as active elements, of semiconductor devices (using diodes H03K17/74)

IPC and CPC are identically structured here. All 6 subcodes exist in both systems.

3 shared codes have differing titles between IPC and CPC.

Child Classifications

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H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT since 1995 IPC+CPC Available in IPC and CPC
H03K 17/58 the devices being tunnel diodes IPC+CPC Available in IPC and CPC
H03K 17/60 the devices being bipolar transistors (bipolar transistors having four or more electrodes H03K17/72) +3 CPC IPC+CPC Available in IPC and CPC
H03K 17/687 the devices being field-effect transistors since 1980 +4 CPC −1 IPC IPC+CPC Available in IPC and CPC
H03K 17/70 the devices having only two electrodes and exhibiting negative resistance (the devices being tunnel diodes H03K17/58) IPC+CPC Available in IPC and CPC
H03K 17/72 having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region IPC+CPC Available in IPC and CPC