by the use, as active elements, of semiconductor devices

Full Title

Electronic switching or gating, i.e. not by contact-making and -breaking > characterised by the use of specified components > by the use, as active elements, of semiconductor devices

Classification Context

Section:

ELECTRICITY

Class:

ELECTRONIC CIRCUITRY

Subclass:

PULSE TECHNIQUE

Child Classifications

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• H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
• H03K 17/58 the devices being tunnel diodes
• H03K 17/6 the devices being bipolar transistors
• H03K 17/687 the devices being field-effect transistors
• H03K 17/7 the devices having only two electrodes and exhibiting negative resistance
• H03K 17/72 Bipolar semiconductor devices with more than two PN junctions, e.g. thyristors, programmable unijunction transistors, or with more than three electrodes, e.g. silicon controlled switches, or with more than one electrode connected to the same conductivity region, e.g. unijunction transistors