Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Child Classifications

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• H10B 53/10 characterised by the top-view layout
• H10B 53/20 characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
• H10B 53/30 characterised by the memory core region
• H10B 53/40 characterised by the peripheral circuit region
• H10B 53/50 characterised by the boundary region between the core and peripheral circuit regions