H10D 30/402 Full Title
Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00) > FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
Filing statistics
CPC H10D 30/402 belongs to the parent subclass H10D, which recorded 324,912 patent applications worldwide between 2013 and 2023. Annual filings grew from 24,303 in 2013 to 30,387 in 2023 (+25%), peaking at 34,149 applications in 2022. The most active applicants in class H10 are SAMSUNG DISPLAY (38,446 applications), TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (30,922 applications) and SAMSUNG ELECTRONICS COMPANY (30,059 applications).
Source: EPO PATSTAT, worldwide filings
Top Applicants
Top 10 applicants by patent filingsfor class H10, 2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 38,446
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 30,922
- SAMSUNG ELECTRONICS COMPANY KR 30,059
- BOE TECHNOLOGY GROUP COMPANY CN 20,304
- LG DISPLAY COMPANY KR 17,772
- BOE TECHNOLOGY GROUP COMPANY 15,621
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 13,629
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 11,750
- SAMSUNG DISPLAY 11,316
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 9,697