CPC Main Group
H10D 30/00 Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00)
7 direct subcodes
Child Classifications
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- H10D 30/01 Manufacture or treatment
- H10D 30/40 FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D 30/60 Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10D 30/80 FETs having rectifying junction gate electrodes (H10D30/40 takes precedence)
Top Applicants
Top 10 applicants by patent filingsfor class H10, 2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 38,446
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 30,922
- SAMSUNG ELECTRONICS COMPANY KR 30,059
- BOE TECHNOLOGY GROUP COMPANY CN 20,304
- LG DISPLAY COMPANY KR 17,772
- BOE TECHNOLOGY GROUP COMPANY 15,621
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 13,629
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 11,750
- SAMSUNG DISPLAY 11,316
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 9,697