Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00)

Child Classifications

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• H10D 30/01 Manufacture or treatment
• H10D 30/202
• H10D 30/204
• H10D 30/40 FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
• H10D 30/501
• H10D 30/60 Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
• H10D 30/80 FETs having rectifying junction gate electrodes (H10D30/40 takes precedence)