using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies

Full Title

Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > Manufacture or treatment > characterised by using material-based technologies > using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies