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PCE
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CPC Subgroup
H10D 84/87

of PN-junction gate FETs

Full Title

Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs (H10D84/40 takes precedence) > of PN-junction gate FETs