CPC Subgroup
H10D 84/80 characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs (H10D84/40 takes precedence)
Full Title
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs (H10D84/40 takes precedence)
4 direct subcodes
Child Classifications
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- H10D 84/82 of only field-effect components
- H10D 84/86 of Schottky-barrier gate FETs
- H10D 84/87 of PN-junction gate FETs