ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

Description

H10N covers electric solid-state devices that do not fit within more specific semiconductor device classifications in the H10 section. This subclass serves as a residual category for emerging or unconventional solid-state electronic devices, including novel device architectures and technologies that lack dedicated classification codes elsewhere. It captures innovations in solid-state technology that fall outside traditional semiconductor categories (diodes, transistors, integrated circuits) but are not adequately addressed in other H10 subdivisions.

17 direct subcodes

Child Classifications

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H10N 10/00 Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects (integrated devices or assemblies of multiple devices H10N19/00)
H10N 15/00 Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N19/00)
H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
H10N 30/00 Piezoelectric or electrostrictive devices (integrated devices or assemblies of multiple devices H10N39/00)
H10N 35/00 Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N39/00)
H10N 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
H10N 50/00 Galvanomagnetic devices (Hall-effect devices H10N52/00; integrated devices or assemblies of multiple devices H10N59/00)
H10N 52/00 Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00)
H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 (MRAM devices H10B61/00)
H10N 60/00 Superconducting devices (integrated devices or assemblies of multiple devices H10N69/00)
H10N 69/00 Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
H10N 70/00 Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N79/00)
H10N 79/00 Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N70/00 (ReRAM devices H10B63/00; PCRAM devices H10B63/10)
H10N 80/00 Bulk negative-resistance effect devices (integrated devices or assemblies of multiple devices H10N89/00)
H10N 89/00 Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group H10N80/00
H10N 97/00 Electric solid-state thin-film or thick-film devices, not otherwise provided for
H10N 99/00 Subject matter not provided for in other groups of this subclass