H10N ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Introduced: January 2023
Classification Context
- Section:
- ELECTRICITY
- Class:
- SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- Subclass:
- ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Description
H10N covers electric solid-state devices that do not fit within more specific semiconductor device classifications in the H10 section. This subclass serves as a residual category for emerging or unconventional solid-state electronic devices, including novel device architectures and technologies that lack dedicated classification codes elsewhere. It captures innovations in solid-state technology that fall outside traditional semiconductor categories (diodes, transistors, integrated circuits) but are not adequately addressed in other H10 subdivisions.
Scope Notes
Glossary: active material active materials material within which the physical effects that are characteristic of the device occur | Application references: Measurement of mechanical vibrations or ultrasonic, sonic or infrasonic waves Measuring electrical or magnetic variables
17 direct subcodes
Child Classifications
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- H10N 10/00 Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N 15/00 Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups
- H10N 30/00 Piezoelectric or electrostrictive devices
- H10N 35/00 Magnetostrictive devices
- H10N 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups
- H10N 50/00 Galvanomagnetic devices
- H10N 52/00 Hall-effect devices
- H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups
- H10N 60/00 Superconducting devices
- H10N 69/00 Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group
- H10N 70/00 Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N 79/00 Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group
- H10N 80/00 Bulk negative-resistance effect devices
- H10N 89/00 Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group
- H10N 97/00 Electric solid-state thin-film or thick-film devices, not otherwise provided for
- H10N 99/00 Subject matter not provided for in other groups of this subclass