H10N ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Introduced: January 2023
Classification Context
- Section:
- ELECTRICITY
- Class:
- SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- Subclass:
- ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Description
H10N covers electric solid-state devices that do not fit within more specific semiconductor device classifications in the H10 section. This subclass serves as a residual category for emerging or unconventional solid-state electronic devices, including novel device architectures and technologies that lack dedicated classification codes elsewhere. It captures innovations in solid-state technology that fall outside traditional semiconductor categories (diodes, transistors, integrated circuits) but are not adequately addressed in other H10 subdivisions.
Additional Content
Glossary
active material active materials material within which the physical effects that are characteristic of the device occur
Application references
Measurement of mechanical vibrations or ultrasonic, sonic or infrasonic waves Measuring electrical or magnetic variables
17 direct subcodes
Child Classifications
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- H10N 10/00 Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N 15/00 Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups
- H10N 30/00 Piezoelectric or electrostrictive devices
- H10N 35/00 Magnetostrictive devices
- H10N 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups
- H10N 50/00 Galvanomagnetic devices
- H10N 52/00 Hall-effect devices
- H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups
- H10N 60/00 Superconducting devices
- H10N 69/00 Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group
- H10N 70/00 Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N 79/00 Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group
- H10N 80/00 Bulk negative-resistance effect devices
- H10N 89/00 Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group
- H10N 97/00 Electric solid-state thin-film or thick-film devices, not otherwise provided for
- H10N 99/00 Subject matter not provided for in other groups of this subclass
Top Applicants
Top 10 applicants by patent filingsfor class H10, 2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 21,044
- SAMSUNG ELECTRONICS COMPANY KR 14,774
- LG DISPLAY COMPANY KR 9,454
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 8,301
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 7,642
- BOE TECHNOLOGY GROUP COMPANY 6,845
- BOE TECHNOLOGY GROUP COMPANY CN 6,806
- SAMSUNG DISPLAY 6,577
- LG CHEM KR 5,461
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 5,115