H10N ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Introduced: January 2023
Description
H10N covers electric solid-state devices that do not fit within more specific semiconductor device classifications in the H10 section. This subclass serves as a residual category for emerging or unconventional solid-state electronic devices, including novel device architectures and technologies that lack dedicated classification codes elsewhere. It captures innovations in solid-state technology that fall outside traditional semiconductor categories (diodes, transistors, integrated circuits) but are not adequately addressed in other H10 subdivisions.
Additional Content IPC
Glossary
active material active materials material within which the physical effects that are characteristic of the device occur
Application references
Measurement of mechanical vibrations or ultrasonic, sonic or infrasonic waves Measuring electrical or magnetic variables
IPC and CPC are identically structured here. All 17 subcodes exist in both systems.
15 shared codes have differing titles between IPC and CPC.
IPC defines codes here since 2023.
Child Classifications
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- H10N 10/00 Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects (integrated devices or assemblies of multiple devices H10N19/00) since 2023 IPC+CPC Available in IPC and CPC
- H10N 15/00 Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N19/00) since 2023 IPC+CPC Available in IPC and CPC
- H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00 since 2023 +1 CPC IPC+CPC Available in IPC and CPC
- H10N 30/00 Piezoelectric or electrostrictive devices (integrated devices or assemblies of multiple devices H10N39/00) since 2023 +3 CPC IPC+CPC Available in IPC and CPC
- H10N 35/00 Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N39/00) since 2023 +1 CPC IPC+CPC Available in IPC and CPC
- H10N 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00 since 2023 IPC+CPC Available in IPC and CPC
- H10N 50/00 Galvanomagnetic devices (Hall-effect devices H10N52/00; integrated devices or assemblies of multiple devices H10N59/00) since 2023 IPC+CPC Available in IPC and CPC
- H10N 52/00 Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00) since 2023 +1 CPC IPC+CPC Available in IPC and CPC
- H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 (MRAM devices H10B61/00) since 2023 IPC+CPC Available in IPC and CPC
- H10N 60/00 Superconducting devices (integrated devices or assemblies of multiple devices H10N69/00) since 2023 +1 CPC IPC+CPC Available in IPC and CPC
- H10N 69/00 Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00 since 2023 IPC+CPC Available in IPC and CPC
- H10N 70/00 Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N79/00) since 2023 +3 CPC IPC+CPC Available in IPC and CPC
- H10N 79/00 Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N70/00 (ReRAM devices H10B63/00; PCRAM devices H10B63/10) since 2023 IPC+CPC Available in IPC and CPC
- H10N 80/00 Bulk negative-resistance effect devices (integrated devices or assemblies of multiple devices H10N89/00) since 2023 +1 CPC IPC+CPC Available in IPC and CPC
- H10N 89/00 Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group H10N80/00 since 2023 +1 CPC IPC+CPC Available in IPC and CPC
- H10N 97/00 Electric solid-state thin-film or thick-film devices, not otherwise provided for since 2023 IPC+CPC Available in IPC and CPC
- H10N 99/00 Subject matter not provided for in other groups of this subclass since 2023 +2 CPC IPC+CPC Available in IPC and CPC
Top Applicants
Top Applicants (IPC)
Class H10,2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 21,044
- SAMSUNG ELECTRONICS COMPANY KR 14,774
- LG DISPLAY COMPANY KR 9,454
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 8,301
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 7,642
- BOE TECHNOLOGY GROUP COMPANY 6,845
- BOE TECHNOLOGY GROUP COMPANY CN 6,806
- SAMSUNG DISPLAY 6,577
- LG CHEM KR 5,461
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 5,115
Top Applicants (CPC)
Class H10,2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 38,446
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 30,922
- SAMSUNG ELECTRONICS COMPANY KR 30,059
- BOE TECHNOLOGY GROUP COMPANY CN 20,304
- LG DISPLAY COMPANY KR 17,772
- BOE TECHNOLOGY GROUP COMPANY 15,621
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 13,629
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 11,750
- SAMSUNG DISPLAY 11,316
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 9,697