Isolation regions comprising dielectric materials

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Isolation regions in semiconductor bodies between components of integrated devices > Isolation regions comprising dielectric materials

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• H10W 10/13 formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
• H10W 10/17 formed using trench refilling with dielectric materials, e.g. shallow trench isolations
• H10W 10/181