by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Silicon; Compounds thereof > Silicon > Preparation > by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material > by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Silicon; Compounds thereof ( C01B21/00, C01B23/00 take precedence; persilicates C01B15/14; carbides C01B32/956) > Silicon (forming single crystals or homogeneous polycrystalline material with defined structure C30B) > Preparation (chemical coating from the vapour phase C23C16/00) > by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material > by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process