C30B SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
Introduced: January 1980
Description
C30B covers technologies for growing single crystals and producing polycrystalline materials with controlled microstructure through directed solidification processes. This includes Czochralski, Bridgman, and floating-zone methods for single-crystal growth; unidirectional solidification of eutectic systems; zone-melting refining; and production of homogeneous polycrystalline materials with defined grain structure. The classification also encompasses post-growth treatment of crystals such as annealing, doping, and surface finishing, as well as apparatus and equipment used in these processes. Applications span semiconductor wafers, optical crystals, magnetic materials, and metallurgical products requiring controlled crystallinity.
Title
Titles differ between systems:
IPC: SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
CPC: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
Full Title
Full titles differ between systems:
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
IPC and CPC are identically structured here. All 20 subcodes exist in both systems.
10 shared codes have differing titles between IPC and CPC.
IPC defines codes here since 1980.
Child Classifications
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- C30B 1/00 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B3/00; under a protective fluid C30B27/00) since 1980 IPC+CPC Available in IPC and CPC
- C30B 11/00 Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B13/00, C30B15/00, C30B17/00, C30B19/00 take precedence; under a protective fluid C30B27/00) since 1980 +7 CPC IPC+CPC Available in IPC and CPC
- C30B 13/00 Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00) since 1980 +1 CPC IPC+CPC Available in IPC and CPC
- C30B 15/00 Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) since 1980 +3 CPC IPC+CPC Available in IPC and CPC
- C30B 17/00 Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) since 1980 IPC+CPC Available in IPC and CPC
- C30B 21/00 Unidirectional solidification of eutectic materials since 1980 IPC+CPC Available in IPC and CPC
- C30B 23/00 Single-crystal growth by condensing evaporated or sublimed materials since 1980 +2 CPC IPC+CPC Available in IPC and CPC
- C30B 25/00 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth since 1980 +1 CPC IPC+CPC Available in IPC and CPC
- C30B 27/00 Single-crystal growth under a protective fluid since 1980 IPC+CPC Available in IPC and CPC
- C30B 28/00 Production of homogeneous polycrystalline material with defined structure since 1990 IPC+CPC Available in IPC and CPC
- C30B 29/00 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape since 1980 IPC+CPC Available in IPC and CPC
- C30B 3/00 Unidirectional demixing of eutectoid materials since 1980 IPC+CPC Available in IPC and CPC
- C30B 30/00 Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions since 1990 IPC+CPC Available in IPC and CPC
- C30B 31/00 Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor since 1980 IPC+CPC Available in IPC and CPC
- C30B 33/00 After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) since 1980 +1 CPC IPC+CPC Available in IPC and CPC
- C30B 35/00 Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure since 1980 +3 CPC IPC+CPC Available in IPC and CPC
- C30B 5/00 Single-crystal growth from gels (under a protective fluid C30B27/00) since 1980 IPC+CPC Available in IPC and CPC
- C30B 7/00 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B9/00; by normal or gradient freezing C30B11/00; under a protective fluid C30B27/00) since 1980 +1 CPC IPC+CPC Available in IPC and CPC
- C30B 9/00 Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00) since 1980 IPC+CPC Available in IPC and CPC