SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

Introduced: January 1980

Description

C30B covers technologies for growing single crystals and producing polycrystalline materials with controlled microstructure through directed solidification processes. This includes Czochralski, Bridgman, and floating-zone methods for single-crystal growth; unidirectional solidification of eutectic systems; zone-melting refining; and production of homogeneous polycrystalline materials with defined grain structure. The classification also encompasses post-growth treatment of crystals such as annealing, doping, and surface finishing, as well as apparatus and equipment used in these processes. Applications span semiconductor wafers, optical crystals, magnetic materials, and metallurgical products requiring controlled crystallinity.

Title

Titles differ between systems:

IPC: SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR

CPC: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

Full Title

Full titles differ between systems:

IPC:

SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR

CPC:

SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

Additional Content IPC

Glossary

amorphous description of a solid material not having long-range crystalline lattice structure. crystal crystals description of a solid material having long-range order of atoms or molecules arranged in a regularly-repeating lattice structure. defined structure defined structures the structure of a solid material with grains which are oriented in a preferential way or have larger dimensions than normally obtained. epitaxy the formation of a crystalline layer on a substrate in such a manner that the formed crystal bears a definite crystallographic relationship to the substrate. eutectic description of a mixture or solution containing two or more phases at a composition that has the lowest melting point and where the phases simultaneously crystallise from solution at this temperature. homogeneous polycrystalline material homogeneous polycrystalline materials a solid material with crystal particles, all of which have the same chemical composition. lattice lattices an ordered arrangement of atoms or molecules within a solid material. oriented crystal oriented crystals a polycrystalline structure in which the grains are generally aligned in a preferential direction such as obtained in columnar growth. seed seeds a material, usually itself a small single-crystal, upon which a single-crystal is grown, the seeded crystal growth proceeding by the alignment of atoms or molecules or clusters into a thermodynamically favoured arrangement determined by the nature of the seed. single-crystal single-crystals single crystal single crystals description of a solid material having long-range order of atoms or molecules in a regularly-repeating lattice structure. Also includes twin crystals and a predominantly single crystal product. superlattice superlattices a single-crystal having an internal structure of more than two layers, each layer having a composition different from the next adjacent layer. twin crystal twin crystals a crystalline material in which the adjoining crystalline lattices have a mirror-image symmetrical relationship, the interface between the adjoining crystals being termed the twin plane. zone melting description of a process in which a crystallised body is formed by melting a zone of a starting material with subsequent cooling and crystallisation while either the zone or the starting product is displaced so that all or part of the starting material is converted into the crystallised body.

Limiting references

Formation of diamonds using ultra-high pressure Zone-refining of metals or alloys Casting of metals, casting of other substances by the same processes or devices Modifying the physical structure of metals or alloys , Production of semiconductor devices or parts thereof; semiconductor devices characterised by their crystalline structure or particular orientation of the crystalline planes

IPC and CPC are identically structured here. All 20 subcodes exist in both systems.

10 shared codes have differing titles between IPC and CPC.

IPC defines codes here since 1980.

Child Classifications

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C30B 1/00 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B3/00; under a protective fluid C30B27/00) since 1980 IPC+CPC Available in IPC and CPC
C30B 11/00 Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B13/00, C30B15/00, C30B17/00, C30B19/00 take precedence; under a protective fluid C30B27/00) since 1980 +7 CPC IPC+CPC Available in IPC and CPC
C30B 13/00 Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00) since 1980 +1 CPC IPC+CPC Available in IPC and CPC
C30B 15/00 Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) since 1980 +3 CPC IPC+CPC Available in IPC and CPC
C30B 17/00 Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) since 1980 IPC+CPC Available in IPC and CPC
C30B 19/00 Liquid-phase epitaxial-layer growth since 1980 IPC+CPC Available in IPC and CPC
C30B 21/00 Unidirectional solidification of eutectic materials since 1980 IPC+CPC Available in IPC and CPC
C30B 23/00 Single-crystal growth by condensing evaporated or sublimed materials since 1980 +2 CPC IPC+CPC Available in IPC and CPC
C30B 25/00 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth since 1980 +1 CPC IPC+CPC Available in IPC and CPC
C30B 27/00 Single-crystal growth under a protective fluid since 1980 IPC+CPC Available in IPC and CPC
C30B 28/00 Production of homogeneous polycrystalline material with defined structure since 1990 IPC+CPC Available in IPC and CPC
C30B 29/00 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape since 1980 IPC+CPC Available in IPC and CPC
C30B 3/00 Unidirectional demixing of eutectoid materials since 1980 IPC+CPC Available in IPC and CPC
C30B 30/00 Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions since 1990 IPC+CPC Available in IPC and CPC
C30B 31/00 Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor since 1980 IPC+CPC Available in IPC and CPC
C30B 33/00 After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) since 1980 +1 CPC IPC+CPC Available in IPC and CPC
C30B 35/00 Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure since 1980 +3 CPC IPC+CPC Available in IPC and CPC
C30B 5/00 Single-crystal growth from gels (under a protective fluid C30B27/00) since 1980 IPC+CPC Available in IPC and CPC
C30B 7/00 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B9/00; by normal or gradient freezing C30B11/00; under a protective fluid C30B27/00) since 1980 +1 CPC IPC+CPC Available in IPC and CPC
C30B 9/00 Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00) since 1980 IPC+CPC Available in IPC and CPC

Top Applicants

Top Applicants (IPC)

Class C30,2013–2023, worldwide · Source: EPO PATSTAT

CHINESE ACADEMY OF SCIENCES 1,516
SUMCO CORPORATION JP 786
SUMCO CORPORATION 703
SUMITOMO ELECTRIC INDUSTRIES JP 604
SHIN ETSU HANDOTAI COMPANY JP 556
GLOBALWAFERS COMPANY TW 492
APPLIED MATERIALS US 463
SHIN ETSU HANDOTAI COMPANY 450
SUMITOMO ELECTRIC INDUSTRIES 436
SILTRONIC DE 429

Top Applicants (CPC)

Class C30,2013–2023, worldwide · Source: EPO PATSTAT

CHINESE ACADEMY OF SCIENCES 1,052
SUMCO CORPORATION JP 881
APPLIED MATERIALS US 871
SUMITOMO ELECTRIC INDUSTRIES JP 682
SHIN ETSU HANDOTAI COMPANY JP 649
SHIN-ETSU CHEMICAL COMPANY JP 506
SUMCO CORPORATION 500
SILTRONIC DE 491
GLOBALWAFERS COMPANY TW 458
NGK INSULATORS JP 379