C30B SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
Introduced: January 1980
Classification Context
- Section:
- CHEMISTRY; METALLURGY
- Class:
- CRYSTAL GROWTH
- Subclass:
- SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
Description
C30B covers technologies for growing single crystals and producing polycrystalline materials with controlled microstructure through directed solidification processes. This includes Czochralski, Bridgman, and floating-zone methods for single-crystal growth; unidirectional solidification of eutectic systems; zone-melting refining; and production of homogeneous polycrystalline materials with defined grain structure. The classification also encompasses post-growth treatment of crystals such as annealing, doping, and surface finishing, as well as apparatus and equipment used in these processes. Applications span semiconductor wafers, optical crystals, magnetic materials, and metallurgical products requiring controlled crystallinity.
Scope Notes
Glossary: amorphous description of a solid material not having long-range crystalline lattice structure. crystal crystals description of a solid material having long-range order of atoms or molecules arranged in a regularly-repeating lattice structure. defined structure defined structures the structure of a solid material with grains which are oriented in a preferential way or have larger dimensions than normally obtained. epitaxy the formation of a crystalline layer on a substrate in such a manner that the formed crystal bears a definite crystallographic relationship to the substrate. eutectic description of a mixture or solution containing two or more phases at a composition that has the lowest melting point and where the phases simultaneously crystallise from solution at this temperature. homogeneous polycrystalline material homogeneous polycrystalline materials a solid material with crystal particles, all of which have the same chemical composition. lattice lattices an ordered arrangement of atoms or molecules within a solid material. oriented crystal oriented crystals a polycrystalline structure in which the grains are generally aligned in a preferential direction such as obtained in columnar growth. seed seeds a material, usually itself a small single-crystal, upon which a single-crystal is grown, the seeded crystal growth proceeding by the alignment of atoms or molecules or clusters into a thermodynamically favoured arrangement determined by the nature of the seed. single-crystal single-crystals single crystal single crystals description of a solid material having long-range order of atoms or molecules in a regularly-repeating lattice structure. Also includes twin crystals and a predominantly single crystal product. superlattice superlattices a single-crystal having an internal structure of more than two layers, each layer having a composition different from the next adjacent layer. twin crystal twin crystals a crystalline material in which the adjoining crystalline lattices have a mirror-image symmetrical relationship, the interface between the adjoining crystals being termed the twin plane. zone melting description of a process in which a crystallised body is formed by melting a zone of a starting material with subsequent cooling and crystallisation while either the zone or the starting product is displaced so that all or part of the starting material is converted into the crystallised body. | Limiting references: Formation of diamonds using ultra-high pressure Zone-refining of metals or alloys Casting of metals, casting of other substances by the same processes or devices Modifying the physical structure of metals or alloys , Production of semiconductor devices or parts thereof; semiconductor devices characterised by their crystalline structure or particular orientation of the crystalline planes
Related Keywords
20 direct subcodes
Child Classifications
Navigate with arrow keys, Enter to open
- C30B 1/00 Single-crystal growth directly from the solid state
- C30B 11/00 Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
- C30B 13/00 Single-crystal growth by zone-melting; Refining by zone-melting
- C30B 15/00 Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B 17/00 Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
- C30B 19/00 Liquid-phase epitaxial-layer growth
- C30B 21/00 Unidirectional solidification of eutectic materials
- C30B 23/00 Single-crystal growth by condensing evaporated or sublimed materials
- C30B 25/00 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
- C30B 27/00 Single-crystal growth under a protective fluid
- C30B 28/00 Production of homogeneous polycrystalline material with defined structure
- C30B 29/00 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B 3/00 Unidirectional demixing of eutectoid materials
- C30B 30/00 Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B 31/00 Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B 33/00 After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B 35/00 Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B 5/00 Single-crystal growth from gels
- C30B 7/00 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B 9/00 Single-crystal growth from melt solutions using molten solvents