C30B 1/02 by thermal treatment, e.g. strain annealing (C30B1/12 takes precedence)
Introduced: January 1980
Title
Titles differ between systems:
IPC: by thermal treatment, e.g. strain annealing
CPC: by thermal treatment, e.g. strain annealing (C30B1/12 takes precedence)
Full Title
Full titles differ between systems:
Single-crystal growth directly from the solid state > by thermal treatment, e.g. strain annealing
Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B3/00; under a protective fluid C30B27/00) > by thermal treatment, e.g. strain annealing (C30B1/12 takes precedence)
Of 4 combined children, 2 exist in both systems.
2 codes are CPC-only extensions.
IPC defines codes here since 1980.
Child Classifications
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- C30B 1/06 Recrystallisation under a temperature gradient since 1980 IPC+CPC Available in IPC and CPC
Top Applicants
Top Applicants (IPC)
Class C30,2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,516
- SUMCO CORPORATION JP 786
- SUMCO CORPORATION 703
- SUMITOMO ELECTRIC INDUSTRIES JP 604
- SHIN ETSU HANDOTAI COMPANY JP 556
- GLOBALWAFERS COMPANY TW 492
- APPLIED MATERIALS US 463
- SHIN ETSU HANDOTAI COMPANY 450
- SUMITOMO ELECTRIC INDUSTRIES 436
- SILTRONIC DE 429
Top Applicants (CPC)
Class C30,2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,052
- SUMCO CORPORATION JP 881
- APPLIED MATERIALS US 871
- SUMITOMO ELECTRIC INDUSTRIES JP 682
- SHIN ETSU HANDOTAI COMPANY JP 649
- SHIN-ETSU CHEMICAL COMPANY JP 506
- SUMCO CORPORATION 500
- SILTRONIC DE 491
- GLOBALWAFERS COMPANY TW 458
- NGK INSULATORS JP 379