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PCE
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DIFF Subgroup
H10B 43/35

with cell select transistors, e.g. NAND

Introduced: January 2023

Full Title

EEPROM devices comprising charge-trapping gate insulators > characterised by the memory core region > with cell select transistors, e.g. NAND

No child classifications to compare. This is a leaf node in both IPC and CPC.