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PCE
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IPC Subgroup
H10B 43/35

with cell select transistors, e.g. NAND

Introduced: January 2023

Full Title

EEPROM devices comprising charge-trapping gate insulators > characterised by the memory core region > with cell select transistors, e.g. NAND

Classification Context

Section:
ELECTRICITY
Class:
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Subclass:
ELECTRONIC MEMORY DEVICES