H10B ELECTRONIC MEMORY DEVICES
Introduced: January 2023
Description
H10B covers semiconductor-based memory devices and solid-state storage technologies that do not fall within other specific H10 classifications. This includes volatile memory types such as RAM variants, as well as non-volatile memory technologies like flash memory, EEPROM, and other solid-state storage media used for data retention and retrieval. The classification encompasses the structural design, operational principles, and technical characteristics of these electronic memory devices at the component level. Adjacent classes address more specialized memory architectures or memory-related circuit functions handled separately within the H10 hierarchy.
Additional Content IPC
volatile memory volatile memories memory requiring power supply to maintain the stored information: it loses any written data when the system is turned off. non-volatile memory non-volatile memories memory not requiring power supply to maintain the stored information: it retains the written data even when the system is turned off. ferroelectric memory capacitor ferroelectric memory capacitors capacitor with ferroelectric memory properties ferroelectric memory transistor ferroelectric memory transistors transistor with ferroelectric memory properties embedded in a layer of the gate electrodes, e.g. in a MFS or MFMIS layer
IPC and CPC are identically structured here. All 12 subcodes exist in both systems.
1 shared codes have differing titles between IPC and CPC.
IPC defines codes here since 2023.
Child Classifications
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- H10B 10/00 Static random access memory [SRAM] devices since 2023 +3 CPC IPC+CPC Available in IPC and CPC
- H10B 12/00 Dynamic random access memory [DRAM] devices since 2023 +4 CPC IPC+CPC Available in IPC and CPC
- H10B 41/00 Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates since 2023 IPC+CPC Available in IPC and CPC
- H10B 43/00 EEPROM devices comprising charge-trapping gate insulators since 2023 IPC+CPC Available in IPC and CPC
- H10B 51/00 Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors since 2023 IPC+CPC Available in IPC and CPC
- H10B 53/00 Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors since 2023 IPC+CPC Available in IPC and CPC
- H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices since 2023 +2 CPC IPC+CPC Available in IPC and CPC
- H10B 63/00 Resistance change memory devices, e.g. resistive RAM [ReRAM] devices since 2023 +3 CPC IPC+CPC Available in IPC and CPC
- H10B 69/00 Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices since 2023 IPC+CPC Available in IPC and CPC
- H10B 80/00 Assemblies of multiple devices comprising at least one memory device covered by this subclass since 2023 IPC+CPC Available in IPC and CPC
- H10B 99/00 Subject matter not provided for in other groups of this subclass since 2023 +5 CPC IPC+CPC Available in IPC and CPC
Top Applicants
Top Applicants (IPC)
Class H10,2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 21,044
- SAMSUNG ELECTRONICS COMPANY KR 14,774
- LG DISPLAY COMPANY KR 9,454
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 8,301
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 7,642
- BOE TECHNOLOGY GROUP COMPANY 6,845
- BOE TECHNOLOGY GROUP COMPANY CN 6,806
- SAMSUNG DISPLAY 6,577
- LG CHEM KR 5,461
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 5,115
Top Applicants (CPC)
Class H10,2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 38,446
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 30,922
- SAMSUNG ELECTRONICS COMPANY KR 30,059
- BOE TECHNOLOGY GROUP COMPANY CN 20,304
- LG DISPLAY COMPANY KR 17,772
- BOE TECHNOLOGY GROUP COMPANY 15,621
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 13,629
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 11,750
- SAMSUNG DISPLAY 11,316
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 9,697