DIFF Subgroup
H10B 53/20 characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
Introduced: January 2023
Full Title
Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors > characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
No child classifications to compare. This is a leaf node in both IPC and CPC.