DIFF Subgroup
H10D 30/832 Full Title
Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00) > FETs having rectifying junction gate electrodes (H10D30/40 takes precedence) > FETs having PN junction gate electrodes
H10D 30/832 Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00) > FETs having rectifying junction gate electrodes (H10D30/40 takes precedence) > FETs having PN junction gate electrodes