Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00)

Introduced: January 2025

Title

Titles differ between systems:

IPC: Field-effect transistors [FET]

CPC: Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00)

Full titles differ between systems:

IPC:

Field-effect transistors [FET]

CPC:

Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00)

Insulated-gate bipolar transistors

Of 7 combined children, 4 exist in both systems.

3 codes are CPC-only extensions.

2 shared codes have differing titles between IPC and CPC.

IPC defines codes here since 2025.

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H10D 30/01 Manufacture or treatment since 2025 +8 CPC IPC+CPC Available in IPC and CPC
H10D 30/202 CPC only CPC only
H10D 30/204 CPC only CPC only
H10D 30/40 FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels since 2025 +1 CPC IPC+CPC Available in IPC and CPC
H10D 30/501 +2 CPC CPC only CPC only
H10D 30/60 Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) since 2025 +8 CPC IPC+CPC Available in IPC and CPC
H10D 30/80 FETs having rectifying junction gate electrodes (H10D30/40 takes precedence) since 2025 +1 CPC IPC+CPC Available in IPC and CPC

Class H10,2013–2023, worldwide · Source: EPO PATSTAT

Class H10,2013–2023, worldwide · Source: EPO PATSTAT