Combinations of vertical and lateral BJTs

Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > characterised by the integration of at least one component covered by groups or , e.g. integration of BJTs > Combinations of vertical and lateral BJTs

Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs (H10D84/40 takes precedence) > Combinations of vertical and lateral BJTs