IPC Main Group
C30B 15/00 Single-crystal growth by pulling from a melt, e.g. Czochralski method
Introduced: January 1980
Last revised: January 2006
Classification Context
- Section:
- CHEMISTRY; METALLURGY
- Class:
- CRYSTAL GROWTH
- Subclass:
- SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
10 direct subcodes
Child Classifications
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- C30B 15/02 adding crystallising materials or reactants forming it to the melt
- C30B 15/06 Non-vertical pulling
- C30B 15/08 Downward pulling
- C30B 15/1 Crucibles or containers for supporting the melt
- C30B 15/14 Heating of the melt or the crystallised materials
- C30B 15/2 Controlling or regulating
- C30B 15/3 Mechanisms for rotating or moving either the melt or the crystal
- C30B 15/32 Seed holders, e.g. chucks
- C30B 15/34 Edge-defined film-fed crystal growth using dies or slits
- C30B 15/36 characterised by the seed, e.g. its crystallographic orientation
Top Applicants
Top 10 applicants by patent filingsfor class C30, 2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,516
- SUMCO CORPORATION JP 786
- SUMCO CORPORATION 703
- SUMITOMO ELECTRIC INDUSTRIES JP 604
- SHIN ETSU HANDOTAI COMPANY JP 556
- GLOBALWAFERS COMPANY TW 492
- APPLIED MATERIALS US 463
- SHIN ETSU HANDOTAI COMPANY 450
- SUMITOMO ELECTRIC INDUSTRIES 436
- SILTRONIC DE 429