IPC Subgroup
H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Introduced: January 1995
Last revised: January 2006
Full Title
Electronic switching or gating, i.e. not by contact-making and -breaking > characterised by the use of specified components > by the use, as active elements, of semiconductor devices > Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Classification Context
- Section:
- ELECTRICITY
- Class:
- ELECTRONIC CIRCUITRY
- Subclass:
- PULSE TECHNIQUE