Bipolar semiconductor devices with more than two PN junctions, e.g. thyristors, programmable unijunction transistors, or with more than three electrodes, e.g. silicon controlled switches, or with more than one electrode connected to the same conductivity region, e.g. unijunction transistors

Full Title

Electronic switching or gating, i.e. not by contact-making and -breaking > characterised by the use of specified components > by the use, as active elements, of semiconductor devices > Bipolar semiconductor devices with more than two PN junctions, e.g. thyristors, programmable unijunction transistors, or with more than three electrodes, e.g. silicon controlled switches, or with more than one electrode connected to the same conductivity region, e.g. unijunction transistors

Classification Context

Section:

ELECTRICITY

Class:

ELECTRONIC CIRCUITRY

Subclass:

PULSE TECHNIQUE

Child Classifications

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• H03K 17/722 with galvanic isolation between the control circuit and the output circuit
• H03K 17/725 for AC voltages or currents
• H03K 17/73 for DC voltages or currents
• H03K 17/735 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors