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PCE
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IPC Subgroup
H10B 43/3

characterised by the memory core region

Introduced: January 2023

Full Title

EEPROM devices comprising charge-trapping gate insulators > characterised by the memory core region

Classification Context

Section:
ELECTRICITY
Class:
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Subclass:
ELECTRONIC MEMORY DEVICES

1 direct subcode

Child Classifications

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  • H10B 43/35 with cell select transistors, e.g. NAND