IPC Subgroup
H10D 84/02 characterised by using material-based technologies
Introduced: January 2025
Full Title
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > Manufacture or treatment > characterised by using material-based technologies
Classification Context
- Section:
- ELECTRICITY
- Class:
- SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- Subclass:
- INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
4 direct subcodes
Child Classifications
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- H10D 84/03 using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D 84/05 using Group III-V technology
- H10D 84/07 using Group II-VI technology
- H10D 84/08 using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
Top Applicants
Top 10 applicants by patent filingsfor class H10, 2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 21,044
- SAMSUNG ELECTRONICS COMPANY KR 14,774
- LG DISPLAY COMPANY KR 9,454
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 8,301
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 7,642
- BOE TECHNOLOGY GROUP COMPANY 6,845
- BOE TECHNOLOGY GROUP COMPANY CN 6,806
- SAMSUNG DISPLAY 6,577
- LG CHEM KR 5,461
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 5,115