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IPC Subgroup
H10D 84/02

characterised by using material-based technologies

Introduced: January 2025

Full Title

Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > Manufacture or treatment > characterised by using material-based technologies

Classification Context

Section:
ELECTRICITY
Class:
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Subclass:
INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

4 direct subcodes

Child Classifications

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  • H10D 84/03 using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
  • H10D 84/05 using Group III-V technology
  • H10D 84/07 using Group II-VI technology
  • H10D 84/08 using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies

Top Applicants

Top 10 applicants by patent filingsfor class H10, 2013–2023, worldwide · Source: EPO PATSTAT

  1. SAMSUNG DISPLAY KR 21,044
  2. SAMSUNG ELECTRONICS COMPANY KR 14,774
  3. LG DISPLAY COMPANY KR 9,454
  4. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 8,301
  5. SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 7,642
  6. BOE TECHNOLOGY GROUP COMPANY 6,845
  7. BOE TECHNOLOGY GROUP COMPANY CN 6,806
  8. SAMSUNG DISPLAY 6,577
  9. LG CHEM KR 5,461
  10. SEMICONDUCTOR ENERGY LABORATORY COMPANY 5,115