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PCE
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IPC Subgroup
H10W 10/13

formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Introduced: January 2026

Full Title

Isolation regions in semiconductor bodies between components of integrated devices > Isolation regions comprising dielectric materials > formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Classification Context

Section:
ELECTRICITY
Class:
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Subclass:
GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS