IPC Subgroup
H10W 10/13 formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
Introduced: January 2026
Full Title
Isolation regions in semiconductor bodies between components of integrated devices > Isolation regions comprising dielectric materials > formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
Classification Context
- Section:
- ELECTRICITY
- Class:
- SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- Subclass:
- GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS