DIFF Subgroup
H10W 10/13 formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
Introduced: January 2026
Full Title
Isolation regions in semiconductor bodies between components of integrated devices > Isolation regions comprising dielectric materials > formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
No child classifications to compare. This is a leaf node in both IPC and CPC.