Controlling etch progression

Full Title

Manufacture or treatment of microstructural devices or systems > in or on a substrate > Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning > Processes for removing material > Etching > Controlling etch progression

Child Classifications

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• B81C 2201/0136 by doping limited material regions
• B81C 2201/0138 Monitoring physical parameters in the etching chamber, e.g. pressure, temperature or gas composition
• B81C 2201/0139 with the electric potential of an electrochemical etching
• B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
• B81C 2201/0142 Processes for controlling etch progression not provided for in B81C2201/0136 - B81C2201/014