Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)

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Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00) > Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)

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• H10D 30/601
• H10D 30/611
• H10D 30/62 Fin field-effect transistors [FinFET]
• H10D 30/63 Vertical IGFETs (H10D30/66 take precedence)
• H10D 30/637
• H10D 30/64 Double-diffused metal-oxide semiconductor [DMOS] FETs
• H10D 30/67 Thin-film transistors [TFT]
• H10D 30/68 Floating-gate IGFETs
• H10D 30/69 IGFETs having charge trapping gate insulators, e.g. MNOS transistors
• H10D 30/701
• H10D 30/711
• H10D 30/721
• H10D 30/751
• H10D 30/791