DIFF Subgroup
H10D 30/60 Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
Introduced: January 2025
Title
Titles differ between systems:
IPC: Insulated-gate field-effect transistors [IGFET]
CPC: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
Full Title
Full titles differ between systems:
IPC:
Field-effect transistors [FET] > Insulated-gate field-effect transistors [IGFET]
CPC:
Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00) > Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
CPC subdivides this area 2x more granularly than IPC with 8 additional codes.
8 codes are CPC-only extensions.
1 shared codes have differing titles between IPC and CPC.
IPC defines codes here since 2025.
Child Classifications
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- H10D 30/63 Vertical IGFETs (H10D30/66 take precedence) since 2025 +1 CPC IPC+CPC Available in IPC and CPC
- H10D 30/64 Double-diffused metal-oxide semiconductor [DMOS] FETs since 2025 +1 CPC IPC+CPC Available in IPC and CPC
- H10D 30/69 IGFETs having charge trapping gate insulators, e.g. MNOS transistors since 2025 +3 CPC IPC+CPC Available in IPC and CPC