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DIFF Subgroup
H10D 84/80

characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs (H10D84/40 takes precedence)

Introduced: January 2025

Title

Titles differ between systems:

IPC: characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs

CPC: characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs (H10D84/40 takes precedence)

Full Title

Full titles differ between systems:

IPC:

Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs

CPC:

Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs (H10D84/40 takes precedence)

Of 4 combined children, 3 exist in both systems.

1 codes are CPC-only extensions.

IPC defines codes here since 2025.

Child Classifications

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  • H10D 84/86 of Schottky-barrier gate FETs since 2025 IPC+CPC Available in IPC and CPC
  • H10D 84/87 of PN-junction gate FETs since 2025 IPC+CPC Available in IPC and CPC